SPI20N60C3

Marking：I2PAK；Package：TO-262；Isc N-Channel MOSFET Transistor

•FEATURES •WithTO-262(I2PAK)package •Lowinputcapacitanceandgatecharge •Highpeakcurrentcapability •Improvedtransconductance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

SPI20N60C3

Cool MOS Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

SPI20N60CFD

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Intrinsicfast-recoverybodydiode •Extremelowreverserecoverycharge •Pb-freeleadplating;

SPI20N60CFD

isc N-Channel MOSFET Transistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.22Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

SPI20N65C3

Marking：20N65C3；Package：TO-262；Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0

SPI21N10

SIPMOS Power-Transistor

Feature •N-Channel •Enhancementmode •175°Coperatingtemperature •Avalancherated •dv/dtrated

SPI21N50C3

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

SPI20N60C3

New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

SPI20N65C3

Marking：20N65C3；Package：TO-262；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

SPI20N65C3

Marking：20N65C3；Package：TO-262；New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated