Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：314.6 Kbytes 页数：14 Pages

Infineon

英飞凌

丝印：I2PAK；Package：TO-262；Isc N-Channel MOSFET Transistor

• FEATURES • With TO-262(I2PAK) package • Low input capacitance and gate charge • High peak current capability • Improved transconductance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：356.51 Kbytes 页数：3 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.22Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：330.85 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge • Pb-free lead plating;

文件：366.5 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：20N65C3；Package：TO-262；Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0

文件：784.74 Kbytes 页数：14 Pages

Infineon

英飞凌

SIPMOS Power-Transistor

Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated

文件：483.75 Kbytes 页数：8 Pages

Infineon

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：341.43 Kbytes 页数：13 Pages

Infineon

英飞凌

New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

文件：1.83839 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：20N65C3；Package：TO-262；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

文件：1.94391 Mbytes 页数：15 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

文件：331.46 Kbytes 页数：2 Pages

ISC

无锡固电