首页 >SPI15N60CFD>规格书列表
型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
SPI15N60CFD | CoolMOSTM Power Transistor Intrinsic fast-recovery body diode Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv/dtrated • High peak current capability • Qualified according to JEDEC for target applications CoolMOS CFD designed for: • Softswitching PWM Stages • LCD & CRT TV 文件:333.95 Kbytes 页数:12 Pages | Infineon 英飞凌 | Infineon | |
SPI15N60CFD | isc N-Channel MOSFET Transistor • DESCRITION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.33Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件:331.57 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
SPI15N60CFD | 500V-900V CoolMOS™ N-Channel Power MOSFET CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. \n CoolMOS™ CFD2 is rep ·Fourth series of CoolMOS™ market entry in 2004\n ·Fast Body Diode, Q rr 1/10th of C3 series, V th 4 V, g fs high, R g low\n ·Specific for phase-shift ZVS and DC-AC power applications; | Infineon 英飞凌 | Infineon | |
CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC CoolMOS CFD designed for: • Softswitching P 文件:340.34 Kbytes 页数:12 Pages | Infineon 英飞凌 | Infineon | ||
CoolMOS Power Transistor 文件:543.38 Kbytes 页数:12 Pages | Infineon 英飞凌 | Infineon | ||
N-Channel MOSFET Transistor • DESCRITION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.33Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件:339.19 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC |
技术参数
- VDS max:
600.0V
- RDS (on) max:
330.0mΩ
- Polarity :
N
- ID max:
13.4A
- Ptot max:
156.0W
- IDpuls max:
33.0A
- VGS(th) min max:
3.0V 5.0V
- QG :
63.0nC
- Rth :
0.8K/W
- RthJC max:
0.8K/W
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
- |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
INFINEON |
24+ |
PG-TO262-3I2PAK(TO |
8866 |
询价 | |||
INFINEON |
24+ |
TO-262 |
5000 |
只做原装公司现货 |
询价 | ||
INF |
2018+ |
TO-262 |
26976 |
代理原装现货/特价热卖! |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INFINEON |
22+ |
TO-262 |
8000 |
终端可免费供样,支持BOM配单 |
询价 | ||
INFINEON/英飞凌 |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ADI |
23+ |
TO-262 |
8000 |
只做原装现货 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-262 |
17495 |
询价 | |||
INFINEON |
25+ |
TO262-3 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
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