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SPI15N60CFD

CoolMOSTM Power Transistor Intrinsic fast-recovery body diode

Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv/dtrated • High peak current capability • Qualified according to JEDEC for target applications CoolMOS CFD designed for: • Softswitching PWM Stages • LCD & CRT TV

文件:333.95 Kbytes 页数:12 Pages

Infineon

英飞凌

SPI15N60CFD

isc N-Channel MOSFET Transistor

• DESCRITION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.33Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件:331.57 Kbytes 页数:2 Pages

ISC

无锡固电

SPI15N60CFD

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. \n CoolMOS™ CFD2 is rep ·Fourth series of CoolMOS™ market entry in 2004\n ·Fast Body Diode, Q rr 1/10th of C3 series, V th 4 V, g fs high, R g low\n ·Specific for phase-shift ZVS and DC-AC power applications;

Infineon

英飞凌

SPP15N60CFD

CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode

Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC CoolMOS CFD designed for: • Softswitching P

文件:340.34 Kbytes 页数:12 Pages

Infineon

英飞凌

SPP15N60CFD

CoolMOS Power Transistor

文件:543.38 Kbytes 页数:12 Pages

Infineon

英飞凌

SPP15N60CFD

N-Channel MOSFET Transistor

• DESCRITION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.33Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件:339.19 Kbytes 页数:2 Pages

ISC

无锡固电

技术参数

  • VDS max:

    600.0V

  • RDS (on) max:

    330.0mΩ

  • Polarity :

    N

  • ID  max:

    13.4A

  • Ptot max:

    156.0W

  • IDpuls max:

    33.0A

  • VGS(th) min max:

    3.0V 5.0V

  • QG :

    63.0nC 

  • Rth :

    0.8K/W 

  • RthJC max:

    0.8K/W

供应商型号品牌批号封装库存备注价格
Infineon(英飞凌)
24+
-
7793
支持大陆交货,美金交易。原装现货库存。
询价
INFINEON
24+
PG-TO262-3I2PAK(TO
8866
询价
INFINEON
24+
TO-262
5000
只做原装公司现货
询价
INF
2018+
TO-262
26976
代理原装现货/特价热卖!
询价
INFINEON/英飞凌
23+
TO-262
50000
全新原装正品现货,支持订货
询价
INFINEON
22+
TO-262
8000
终端可免费供样,支持BOM配单
询价
INFINEON/英飞凌
24+
NA/
50
优势代理渠道,原装正品,可全系列订货开增值税票
询价
ADI
23+
TO-262
8000
只做原装现货
询价
INFINEON/英飞凌
22+
TO-262
17495
询价
INFINEON
25+
TO262-3
3000
就找我吧!--邀您体验愉快问购元件!
询价
更多SPI15N60CFD供应商 更新时间2025-10-5 10:22:00