首页 >SPI07N65C3IN>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance ●PG-TO-220-3:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScompliant •Quali | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance ●PG-TO-220-3:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScompliant •Quali | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor •FEATURES •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance ●PG-TO-220-3:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScompliant •Quali | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
详细参数
- 型号:
SPI07N65C3IN
- 制造商:
Infineon Technologies AG
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
- |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
INFINEON |
23+ |
I2PAK-3 |
8000 |
只做原装现货 |
询价 | ||
JARO |
23+ |
12.95x9.4x3.0mm |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
JARO |
2021 |
12.95x9.4x3.0mm |
40289 |
现货库存一站式配套元器件 |
询价 |
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