首页 >SPD30N03S2L-10MOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
OptiMOSPower-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOSPower-Transistor Feature •N-Channel •Enhancementmode •LogicLevel •LowOn-ResistanceRDS(on) •ExcellentGateChargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
OptiMOSPower-TransistorFeatureN-ChannelEnhancementmode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
OptiMOSPower-Transistor Feature •N-Channel •Enhancementmode •LogicLevel •LowOn-ResistanceRDS(on) •ExcellentGateChargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
OptiMOSPower-Transistor Feature •N-Channel •LogicLevel •Lowon-resistanceRDS(on) •ExcellentGateChargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Avalancherated •dv/dtrated •Idealforfastswitchingapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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