首页 >SPD30N03S2L-07MOS(场效应管)>规格书列表

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IPD30N03S2L-07

OptiMOSPower-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPD30N03S2L-07

OptiMOSPower-Transistor

Feature •N-Channel •Enhancementmode •LogicLevel •ExcellentGateChargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPD30N03S2L-07

N-Channel30-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

SPD30N03S2L-07

OptiMOSaPower-Transistor

Feature •N-Channel •Enhancementmode •LogicLevel •ExcellentGateChargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPD30N03S2L-07

OptiMOSPower-TransistorFeatureEnhancementmodeLogicLevelAvalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPD30N03S2L-07G

OptiMOSPower-TransistorFeatureEnhancementmodeLogicLevelAvalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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