首页 >SPD08N50C3MOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScomp | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor •DESCRITION •Newrevolutionaryhighvoltagetechnology •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performancean | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRITION •Newrevolutionaryhighvoltagetechnology •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performancean | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScomp | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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