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03N60S5

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

03N60S5

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

ISPD03N60S5

N-ChannelMOSFETTransistor

•DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

ISPP03N60S5

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perf

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SPB03N60S5

N-Channel650V(D-S)MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SPB03N60S5

PWMhigh-efficiencyLEDdrivercontrolIC

DIODESDiodes Incorporated

达尔科技

DIODES

SPB03N60S5

HighPowerFactorLEDReplacementT8FluorescentTube

Introduction ThisapplicationnotedescribestheprinciplesanddesignequationsrequiredforthedesignofahighbrightnessLEDlampusingtheAL9910.Theequationsarethenusedtodemonstratethedesignofauniversal,offline,highpowerfactor(PF),13WLEDlampsuitableforuseasthere

DIODESDiodes Incorporated

达尔科技

DIODES

SPB03N60S5

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SPB03N60S5

AL9910EV4Evaluationboardconnectiondiagram

DIODESDiodes Incorporated

达尔科技

DIODES

SPB03N60S5

PWMhigh-efficiencyLEDdrivercontrolIC.

DIODESDiodes Incorporated

达尔科技

DIODES

SPB03N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SPB03N60S5

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SPD03N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SPD03N60S5

N-ChannelMOSFETTransistor

•DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SPN03N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SPN03N60S5

NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SPP03N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SPP03N60S5

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SPP03N60S5

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SPP03N60S5

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perf

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

详细参数

  • 型号:

    SPD03N60S5XT

  • 制造商:

    Rochester Electronics LLC

  • 制造商:

    Infineon Technologies AG

供应商型号品牌批号封装库存备注价格
Infineon(英飞凌)
23+
TO-252
7793
支持大陆交货,美金交易。原装现货库存。
询价
TimeMarkCorporation
5
全新原装 货期两周
询价
Time Mark Corporation
2022+
1
全新原装 货期两周
询价
进口原装
23+
SMD
22189
全新原装现货,专业代理热卖
询价
INFINEON
23+
TO-252-4.5
8000
只做原装现货
询价
23+
N/A
49500
正品授权货源可靠
询价
INF
2022+
SOT252
2500
原厂代理 终端免费提供样品
询价
INF
21+
SOT252
15000
原厂VIP渠道,亚太地区一级代理商,可提供更多数量!
询价
INENOI
20+
SOT252
10000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
INENOI
2220+
SOT252
18399
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
更多SPD03N60S5XT供应商 更新时间2024-4-27 16:12:00