Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

文件：308.41 Kbytes 页数：10 Pages

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High Power Factor LED Replacement T8 Fluorescent Tube

Introduction This application note describes the principles and design equations required for the design of a high brightness LED lamp using the AL9910. The equations are then used to demonstrate the design of a universal, offline, high power factor (PF), 13W LED lamp suitable for use as the re

文件：552.73 Kbytes 页数：12 Pages

DIODES

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N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.10328 Mbytes 页数：9 Pages

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AL9910EV4 Evaluation board connection diagram

文件：227.05 Kbytes 页数：8 Pages

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PWM high-efficiency LED driver control IC.

文件：254.2 Kbytes 页数：12 Pages

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PWM high-efficiency LED driver control IC

文件：226.97 Kbytes 页数：8 Pages

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Cool MOS??Power Transistor

文件：251.72 Kbytes 页数：10 Pages

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Cool MOS Power Transistor

文件：353.32 Kbytes 页数：10 Pages

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500V-900V CoolMOS™ N-Channel Power MOSFET

·Innovative high voltage technology\n ·Worldwide best R DS(on) in TO-251 and TO-252\n ·Ultra low gate charge\n ·Periodic avalanche rated\n ·Extreme dv/dt rated\n ·Ultra low effective capacitances\n ·Improved transconductance;

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Cool MOS Power Transistor

文件：353.32 Kbytes 页数：10 Pages

INFINEON

英飞凌