首页 >SPA50R140P>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.14Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor Features •WorldwidebestRDS(on)inTO220 •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant;Halogenfreeformoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC0) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) CoolMOSCPisdesignedfor: •Hard& | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.14Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor Features •WorldwidebestRDS,oninTO220 •LowestfigureofmeritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant •QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisdesignedfor: •Hard&am | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOSTMPowerTransistor Features •WorldwidebestRDS,oninTO220 •LowestfigureofmeritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant •QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisdesignedfor: •Hard&am | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.14Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSTMPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
500VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半导体有限公司 | MAPLESMI | ||
500VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半导体有限公司 | MAPLESMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
2023+ |
TO-220F |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
INFINEON |
23+ |
TO-220F |
8000 |
只做原装现货 |
询价 | ||
TOSHIBA |
23+ |
TO-TO-220F |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
TOSHIBA/东芝 |
23+ |
TO-220F |
10000 |
公司只做原装正品 |
询价 | ||
VISHAY |
2023+ |
SC70-6L |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
Cornell |
22+ |
NA |
75 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
FREESCALE |
2018+ |
SMD |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
询价 | ||
N/A |
N/A |
DIP-8 |
5000 |
自己现货 |
询价 | ||
ECT |
2306+ |
NA |
6680 |
原装正品公司现货,实单来谈 |
询价 |
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