首页 >SPA16N50C3MOS>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRITION •Newrevolutionaryhighvoltagetechnology •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤280mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandrelia | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor •DESCRITION •ImprovedTransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤280mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRITION •Newrevolutionaryhighvoltagetechnology •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤280mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandrelia | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor •DESCRITION •ImprovedTransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤280mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
COOLMOSPOWERTRANSISTOR | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSPowerTransistor CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fo | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
23+ |
TO-220F |
90000 |
只做原装 全系列供应 价格优势 可开增票 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INFINEON/英飞凌 |
2022 |
TO220 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
INFINEON/英飞凌 |
2122+ |
TO220 |
10000 |
全新原装进口,价格美丽 |
询价 | ||
INFINEON/英飞凌 |
2022+ |
TO-220F |
79999 |
询价 | |||
INFINEON/英飞凌 |
2023+ |
TO-220AB |
20000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
询价 | ||
INFINEON/英飞凌 |
22+ |
PG-TO220-3 |
21797 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
INFINEON/英飞凌 |
22+ |
PG-TO220-3 |
21797 |
询价 | |||
INFINEON/英飞凌 |
24+ |
TO-220F |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
TOSHIBA |
23+ |
TO-TO-220F |
33500 |
全新原装真实库存含13点增值税票! |
询价 |
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