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16N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

ISPP16N50C3

N-ChannelMOSFETTransistor

•DESCRITION •Newrevolutionaryhighvoltagetechnology •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤280mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandrelia

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISPW16N50C3

iscN-ChannelMOSFETTransistor

•DESCRITION •ImprovedTransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤280mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA16N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPA16N50C3

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA16N50C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPA16N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPB16N50C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPB16N50C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPI16N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPI16N50C3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPI16N50C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPI16N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPP16N50C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPP16N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPP16N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPP16N50C3

N-ChannelMOSFETTransistor

•DESCRITION •Newrevolutionaryhighvoltagetechnology •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤280mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandrelia

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPW16N50C3

iscN-ChannelMOSFETTransistor

•DESCRITION •ImprovedTransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤280mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPW16N50C3

COOLMOSPOWERTRANSISTOR

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPW16N50C3

CoolMOSPowerTransistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fo

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
23+
TO-220F
90000
只做原装 全系列供应 价格优势 可开增票
询价
INFINEON/英飞凌
23+
TO220
50000
全新原装正品现货,支持订货
询价
INFINEON/英飞凌
2022
TO220
80000
原装现货,OEM渠道,欢迎咨询
询价
INFINEON/英飞凌
2122+
TO220
10000
全新原装进口,价格美丽
询价
INFINEON/英飞凌
2022+
TO-220F
79999
询价
INFINEON/英飞凌
2023+
TO-220AB
20000
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
询价
INFINEON/英飞凌
22+
PG-TO220-3
21797
终端免费提供样品 可开13%增值税发票
询价
INFINEON/英飞凌
22+
PG-TO220-3
21797
询价
INFINEON/英飞凌
24+
TO-220F
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
TOSHIBA
23+
TO-TO-220F
33500
全新原装真实库存含13点增值税票!
询价
更多SPA16N50C3MOS供应商 更新时间2024-6-20 17:18:00