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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
12N60C3D	文件：124.82 Kbytes Page：8 Pages	24A,600V,UFSSERIESN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODE TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
G12N60C3D	文件：270.84 Kbytes Page：9 Pages	UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode24A,600V TheHGTG12N60C3DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThedevicehasthehighinputimpedanceofaMOSFET andthelowon−stateconductionlossofabipolartransistor.Themuch loweron−statevoltagedropvariesonlymoder	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
HGTG12N60C3D	文件：270.84 Kbytes Page：9 Pages	UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode24A,600V TheHGTG12N60C3DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThedevicehasthehighinputimpedanceofaMOSFET andthelowon−stateconductionlossofabipolartransistor.Themuch loweron−statevoltagedropvariesonlymoder	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
HGTG12N60C3D	文件：102.49 Kbytes Page：7 Pages	24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode Description TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarieso	HARRIS HARRIS corporation	HARRIS
HGTG12N60C3D	文件：98.21 Kbytes Page：7 Pages	24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG12N60C3D	文件：124.82 Kbytes Page：8 Pages	24A,600V,UFSSERIESN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODE TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP12N60C3	文件：131.23 Kbytes Page：7 Pages	24A,600V,UFSSeriesN-ChannelIGBTs TheHGTP12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP12N60C3	文件：131.23 Kbytes Page：6 Pages	24A,600V,UFSSeriesN-ChannelIGBTs Description TheHGTP12N60C3,HGT1S12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchl	HARRIS HARRIS corporation	HARRIS
HGTP12N60C3	文件：119.57 Kbytes Page：6 Pages	24A,600V,UFSSeriesN-ChannelIGBTs TheHGTP12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP12N60C3D	文件：99.41 Kbytes Page：7 Pages	24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatelybetwee	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP12N60C3D	文件：154.92 Kbytes Page：8 Pages	24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatelybetwee	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
P12N60C3	文件：131.23 Kbytes Page：6 Pages	24A,600V,UFSSeriesN-ChannelIGBTs Description TheHGTP12N60C3,HGT1S12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchl	HARRIS HARRIS corporation	HARRIS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市艾宇特电子科技有限公司	SPA12N60C3	INFINEON/英飞凌	21+	TO-247	9852	只做原装正品假一赔十!正规渠道订货!	询价
深圳市科恒伟业电子有限公司	SPA12N60C3	INFINEON/英飞凌	21+	TO-247	9852	只做原装正品假一赔十!正规渠道订货!	询价
深圳兆威电子有限公司	SPA12N60C3	VB	2019	TO-220	55000	绝对原装正品假一罚十!	询价
深圳市芯祺盛科技有限公司	SPA12N60C3	Infineon/英飞凌	1803+	TO-247	5316	向鸿原装现货库存,代理渠道可原厂发货-优势	询价
深圳市宏捷佳电子科技有限公司	SPA12N60C3	INFINEON	23+	TO-TO-220F	12300	全新原装真实库存含13点增值税票!	询价
深圳市国宇半导体科技有限公司	SPA12N60C3	INFINEON/英飞凌	23+	TO-220F	10000	公司只做原装正品	询价
深圳市威尔健半导体有限公司	SPA12N60C3	INFINEON/英飞凌	23+	TO-247	50000	全新原装正品现货,支持订货	询价
深圳市创盛芯科技有限公司	SPA12N60C3	INFINEON/英飞凌	22+	TO-247	144	原装现货假一赔十	询价
深圳廊盛科技有限公司	SPA12N60C3	INFINEON/英飞凌	2022	TO-247	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市河锋鑫科技有限公司	SPA12N60C3	INFINEON	22+	TO-220F	6000	十年配单,只做原装	询价

更多SPA12N60C3供应商更新时间2024-6-22 9:30:00

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