首页 >SPA04N80C3MOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSTMPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor: | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOSTMPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •Ultraloweffectivecapacitances •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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