丝印：SPA；Package：DO-214AC；Transient Voltage Suppressors

400 W peak pulse power capability with a 10/ 1000 s waveform, repetitive rate (duty cycle):0.01 % Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time RoHS compliant High reliability application and automotive grade AEC-Q101 qualified Features

文件：1.22384 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：SPA；Package：UDFN6B；MOSFETs Silicon P-Channel MOS (U-MOS??

文件：300.99 Kbytes 页数：9 Pages

TOSHIBA

东芝

Single In-line Package Switches

Features/Benefits • Thin Single In-line Packaging saves PCB space • Retention feature holds part to PCB prior to soldering • Available in vertical or right angle models • High pressure contact system does not require tape sealing • RoHS compliant

文件：196.99 Kbytes 页数：2 Pages

CK-COMPONENTS

力特

Single In-line Package Switches

Features/Benefits • Thin Single In-line Packaging saves PCB space • Retention feature holds part to PCB prior to soldering • Available in vertical or right angle models • High pressure contact system does not require tape sealing • RoHS compliant

文件：196.99 Kbytes 页数：2 Pages

CK-COMPONENTS

力特

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：261.72 Kbytes 页数：12 Pages

Infineon

英飞凌

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：261.1 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

文件：2.12116 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching application

文件：267.65 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：308.23 Kbytes 页数：14 Pages

Infineon

英飞凌

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：292.69 Kbytes 页数：13 Pages

Infineon

英飞凌