零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
2-FUNCTION,4-DIGITLCDAUTOMOTIVECLOCK-PROGRAMMABLE FEATURES ■DigitalTuningofCrystalFrequency ■PROMforStoringFrequencyCorrectionInformation ■12or24HourTimekeepingOption ■FlashingColon ■TwoSwitchesControlAllSettingFunctions ■HighNoiseImmunity ■InternalPower-UpResetCircuitry ■InternalVoltageRegulation | Allegro Allegro MicroSystems | Allegro | ||
HighCurrentChokes | BournsBourns Inc. 伯恩斯(邦士) | Bourns | ||
Ultra-LowPowerAudioCODECforMobileDevices | REALTEKRealtek Semiconductor Corp 瑞昱瑞昱半导体公司 | REALTEK | ||
Ultra-LowPowerAudioCODECforMobileDevices | REALTEKRealtek Semiconductor Corp 瑞昱瑞昱半导体公司 | REALTEK | ||
Ultra-LowPowerAudioCODECforMobileDevices | REALTEKRealtek Semiconductor Corp 瑞昱瑞昱半导体公司 | REALTEK | ||
High-Current,High-PerformanceDrMOSPowerModule GeneralDescription TheAOZ5616QIisahighefficiencysynchronousbuck powerstagemoduleconsistingoftwoasymmetrical MOSFETsandanintegrateddriver.TheMOSFETsare individuallyoptimizedforoperationinthesynchronous buckconfiguration.TheHigh-SideMOSFETisoptimized toachieve | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
LowpowerNPNTransistor SMALLSIGNALNPNTRANSISTORS ■SILICONEPITAXIALPLANARPNPMEDIUMVOLTAGETRANSISTORS ■SOT-223PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPESAREBCP52-16ANDBCP53-16RESPECTIVELY APPLICATIONS ■MEDIUMVOLTAGELOADSWITCHTRANSISTORS ■ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
NPNMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
80VNPNMEDIUMPOWERTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
80VNPNMEDIUMPOWERTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
NPNMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
NPNMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
80VNPNMEDIUMPOWERTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
80VNPNMEDIUMPOWERTRANSISTORINSOT223 Features BVCEO>80V IC=1AHighContinuousCollectorCurrent ICM=2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
NPNSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
NPNSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
80VNPNMEDIUMPOWERTRANSISTORINSOT223 Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
80VNPNMEDIUMPOWERTRANSISTORINSOT223 Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
80VNPNMEDIUMPOWERTRANSISTORINSOT223 Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
NPNmediumpowertransistor | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | SKTECHNOLGY |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SP |
13+ |
DIP8 |
1000 |
询价 | |||
SP |
22+ |
DIP8 |
28600 |
只做原装正品现货假一赔十一级代理 |
询价 | ||
SP |
22+ |
DIP8 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
SP |
13+ |
DIP8 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
SP |
DIP8 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
SP |
13+ |
DIP8 |
1000 |
只做原装,也只有原装! |
询价 | ||
SP |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | ||||
SP |
2023+ |
DIP8 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
SP硅动力 |
22+ |
DIP-8 |
10000 |
原装现货,假一赔十 |
询价 | ||
SP |
DIP-8 |
30000 |
原装正品价格优势现货库存 |
询价 |
相关规格书
更多- SP5655CSKGMPAD
- SP5657
- SP5658S
- SP5669
- SP6120BEY
- SP6121CN
- SP6123CN
- SP6128AHY
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- SP6641BEK-3.3_TR
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- SP6661EU
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- SP6690EK_TR
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相关库存
更多- SP5655S
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- SP6651AEU
- SP6660CN
- SP6660EN
- SP6661EN
- SP6682ER
- SP6682EU_TR
- SP682CU
- SP690ACN
- SP690AEN
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- SP690SEN
- SP690TEN
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- SP691AEN
- SP692ACN
- SP703CN
- SP705CN
- SP705CU
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- SP706SCU
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- SP706TCU
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- SP707CP
- SP707EN