首页 >SP5616P>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

5616

2-FUNCTION,4-DIGITLCDAUTOMOTIVECLOCK-PROGRAMMABLE

FEATURES ■DigitalTuningofCrystalFrequency ■PROMforStoringFrequencyCorrectionInformation ■12or24HourTimekeepingOption ■FlashingColon ■TwoSwitchesControlAllSettingFunctions ■HighNoiseImmunity ■InternalPower-UpResetCircuitry ■InternalVoltageRegulation

Allegro

Allegro MicroSystems

5616-RC

HighCurrentChokes

BournsBourns Inc.

伯恩斯(邦士)

ALC5616

Ultra-LowPowerAudioCODECforMobileDevices

REALTEKRealtek Semiconductor Corp

瑞昱瑞昱半导体公司

ALC5616-CG

Ultra-LowPowerAudioCODECforMobileDevices

REALTEKRealtek Semiconductor Corp

瑞昱瑞昱半导体公司

ALC5616-CGT

Ultra-LowPowerAudioCODECforMobileDevices

REALTEKRealtek Semiconductor Corp

瑞昱瑞昱半导体公司

AOZ5616QI

High-Current,High-PerformanceDrMOSPowerModule

GeneralDescription TheAOZ5616QIisahighefficiencysynchronousbuck powerstagemoduleconsistingoftwoasymmetrical MOSFETsandanintegrateddriver.TheMOSFETsare individuallyoptimizedforoperationinthesynchronous buckconfiguration.TheHigh-SideMOSFETisoptimized toachieve

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

BCP5616

LowpowerNPNTransistor

SMALLSIGNALNPNTRANSISTORS ■SILICONEPITAXIALPLANARPNPMEDIUMVOLTAGETRANSISTORS ■SOT-223PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPESAREBCP52-16ANDBCP53-16RESPECTIVELY APPLICATIONS ■MEDIUMVOLTAGELOADSWITCHTRANSISTORS ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BCP5616Q

NPNMEDIUMPOWERTRANSISTORSINSOT223

Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616Q

80VNPNMEDIUMPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616QTA

80VNPNMEDIUMPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616QTA

NPNMEDIUMPOWERTRANSISTORSINSOT223

Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616QTC

NPNMEDIUMPOWERTRANSISTORSINSOT223

Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616QTC

80VNPNMEDIUMPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616T

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features BVCEO>80V IC=1AHighContinuousCollectorCurrent ICM=2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616TA

NPNSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT223

Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616TC

NPNSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT223

Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616TQ

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616TQTA

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616TQTC

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCX5616

NPNmediumpowertransistor

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

供应商型号品牌批号封装库存备注价格
SP
13+
DIP8
1000
询价
SP
22+
DIP8
28600
只做原装正品现货假一赔十一级代理
询价
SP
22+
DIP8
9800
只做原装正品假一赔十!正规渠道订货!
询价
SP
13+
DIP8
1000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
SP
DIP8
699839
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
SP
13+
DIP8
1000
只做原装,也只有原装!
询价
SP
589220
16余年资质 绝对原盒原盘 更多数量
询价
SP
2023+
DIP8
700000
柒号芯城跟原厂的距离只有0.07公分
询价
SP硅动力
22+
DIP-8
10000
原装现货,假一赔十
询价
SP
DIP-8
30000
原装正品价格优势现货库存
询价
更多SP5616P供应商 更新时间2024-6-7 14:00:00