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FRL234D

4A,250V,0.700Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRL234H

4A,250V,0.700Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRL234R

4A,250V,0.700Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRM234

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FRM234D

7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRM234H

7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRM234R

7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRS234D

5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRS234H

5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRS234R

5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSL234D

4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSL234R

4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSPYE234F

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSPYE234R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSS234

DC/DCConverterApplications

Features •LowON-resistance. •4.0Vdrive. •Ultrahigh-speedswitching.

SANYOSanyo

三洋三洋电机株式会社

FSS234D

6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSS234R

6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FT234XD

SinglechipUSBtoasynchronousserialdatatransferinterface

FTDIFuture Technology Devices International Ltd

FTDIFuture Technology Devices International Ltd

FT234XD

TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures

FTDIFuture Technology Devices International Ltd

FTDIFuture Technology Devices International Ltd

FT234XDR

TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures

FTDIFuture Technology Devices International Ltd

FTDIFuture Technology Devices International Ltd

详细参数

  • 型号:

    SP234AET

  • 制造商:

    SIPEX

  • 制造商全称:

    Sipex Corporation

  • 功能描述:

    +5V Powered Multi-Channel RS-232 Drivers/Receivers

供应商型号品牌批号封装库存备注价格
SIPEX
22+
SOP16
405
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙
询价
Sipex
23+
SOP16
5000
原装现货,优势热卖
询价
13+
5394
原装分销
询价
SIPEX
04/05+
SOP16
2676
全新原装100真实现货供应
询价
Sipex
01+
SOP16
4136
询价
23+
N/A
85400
正品授权货源可靠
询价
SIPEX
23+
SOP16
50000
全新原装正品现货,支持订货
询价
SIPEX
2022
SOP16
80000
原装现货,OEM渠道,欢迎咨询
询价
SIPEX
SOP16
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
Sipex
2023+
SOP16
4136
进口原装现货
询价
更多SP234AET供应商 更新时间2024-5-15 11:02:00