UPA1723G

MOSFIELDEFFECTTRANSISTOR

FEATURES •Lowon-stateresistance RDS(on)1=6.7mΩMAX.(VGS=4.5V,ID=7.0A) RDS(on)2=7.4mΩMAX.(VGS=4.0V,ID=7.0A) RDS(on)3=8.7mΩMAX.(VGS=2.5V,ID=7.0A) •LowCiss:Ciss=3800pFTYP. •Built-inG-Sprotectiondiode •Smallandsurfacemountpackage(PowerSOP

UPA1723G

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION TheµPA1723isN-ChannelMOSFieldEffectTransistordesignedforpowermanagementswitch. FEATURES •Lowon-stateresistance RDS(on)1=6.7mΩMAX.(VGS=4.5V,ID=7.0A) RDS(on)2=7.4mΩMAX.(VGS=4.0V,ID=7.0A) RDS(on)3=8.7mΩMAX.(VGS=2.5V,ID=7.