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SP001725222

650V/12A Silicon Carbide Schottky Diode in TO247-3 CoolSiC™ Automotive Schottky Diode 650V G5

Features Revolutionarysemiconductormaterial-SiliconCarbide Benchmarkswitchingbehavior Noreverserecovery/Noforwardrecovery Temperatureindependentswitchingbehavior Highsurgecurrentcapability Pb-freeleadplating;RoHScompliant JunctionTemperaturerangefrom-

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SP001725240

650V/16A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) CoolSiC™ Automotive Schottky Diode 650V G5

Features •Revolutionarysemiconductormaterial-SiliconCarbide •Benchmarkswitchingbehavior •Noreverserecovery/Noforwardrecovery •Temperatureindependentswitchingbehavior •Highsurgecurrentcapability •Pb-freeleadplating;RoHScompliant •JunctionTemperaturerange

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SP001725244

650V/12A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) CoolSiC™ Automotive Schottky Diode 650V G5

Features Revolutionarysemiconductormaterial-SiliconCarbide Benchmarkswitchingbehavior Noreverserecovery/Noforwardrecovery Temperatureindependentswitchingbehavior Highsurgecurrentcapability Pb-freeleadplating;RoHScompliant JunctionTemperaturerangefrom-

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SP001850450

HybridPACK™ Drive Module

ElectricalFeatures •Blockingvoltage750V •LowVCEsat •LowSwitchingLosses •LowQgandCrss •LowInductiveDesign •Tvjop=150°C •Short-timeextendedOperationTemperature Tvjop=175°C MechanicalFeatures •4.2kVDC1secInsulation •HighCreepageandClearanceDistances •Compact

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SP001952920

丝印:53C1R;Package:PG-SSO-2-4;Differential Hall Effect Transmission Speed Sensors

1.1TargetApplication ThedifferentialHallEffectsensorTLE4953isdesignedtoprovideinformationaboutrotationalspeedanddirection ofrotationtomoderntransmissionandABSsystems.Theoutputhasbeendesignedasatwowirecurrent interfacebasedonaPulseWidthModulationprinciple

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SP002167802

Digital Absolute Pressure Sensor dTurboTMAP with SENT Output and Temperature Sensor Interface

Features •Increasedmediarobustnessforcurrentautomotiverequirements •Highaccuracypressuresensing(±1.03FSS) •Integratedsignalprocessingforexternaltemperaturesensor •SENTprotocolinterface •Real12-bitpressureresolution •Real12-bittemperatureresolution •Selfdiag

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SP002290988

HybridPACK™ Drive Module

ElectricalFeatures •Blockingvoltage750V •LowVCEsat •LowSwitchingLosses •LowQgandCrss •LowInductiveDesign •Tvjop=150°C •Short-timeextendedOperationTemperature Tvjop=175°C MechanicalFeatures •4.2kVDC1secInsulation •HighCreepageandClearanceDistances •Compact

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SP002428750

Analog Absolute Pressure Sensor

1ProductDescription TheKP226E0109isaminiaturizedAnalogManifoldAirPressureSensor ICbasedonacapacitiveprinciple.Itissurfacemicromachinedwitha monolithicintegratedsignalconditioningcircuitimplementedin BiCMOStechnology. Thesensorconvertsapressureintoananalogo

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SP002516834

HybridPACK™ Drive Module

ElectricalFeatures •Blockingvoltage1200V •LowVCEsat •LowSwitchingLosses •LowQgandCrss •LowInductiveDesign •Tvjop=150°C MechanicalFeatures •4.2kVDC1secInsulation •HighCreepageandClearanceDistances •HighPowerDensity •HighPerformanceSi3N4Ceramic •DirectCooled

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SP002983176

High Precision Hall-Effect Switch with Direction Detection

Features •2.7Vto24Vsupplyvoltageoperation •Operationfromunregulatedpowersupply •Highsensitivityandhighstability ofthemagneticswitchingpoints •Highresistancetomechanicalstress byActiveErrorCompensation •Reversebatteryprotection(-18V) •Superiortemperaturestabi

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

技术参数

  • Leakage Current (uA):

    100

  • Lightning Immunity (8x20us):

    3A

  • AEC-Q101 Qualified:

    No

  • Clamping Voltage:

    2.5V@2A

  • Typical Capacitance (pF):

    0.2

  • Polarity:

    Bidirectional

  • Channels:

    1

  • Sample Request:

    Yes

  • Breakdown Voltage (MIN VBR@IT ) (V):

    0.7

  • Operating Temperature:

    -40° to 125°C

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
23+
SOT-23
15000
全新原装现货,价格优势
询价
ON
23+
60000
现货库存
询价
ROHM/罗姆
22+
SOT-323
25000
只有原装原装,支持BOM配单
询价
NA
23+
NA
26094
10年以上分销经验原装进口正品,做服务型企业
询价
80000
询价
Microchip(微芯)
24+
QFN-28P
10000
低于市场价,实单必成,QQ1562321770
询价
23+
SOT-323
16567
正品:QQ;2987726803
询价
23+
NA
6800
原装正品,力挺实单
询价
24+
6000
全新原厂原装正品现货,低价出售,实单可谈
询价
TOSHIBA/东芝
22+
SOT-153
25000
只有原装绝对原装,支持BOM配单!
询价
更多SP供应商 更新时间2025-7-29 15:05:00