200mW DAP202U SWITCHING DIODE

FEATURES: Power dissipation PD: 200 mW (Tamb=25℃) Collector current IF: 100 mA Collector-base voltage VR: 80 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

文件：47.33 Kbytes 页数：1 Pages

FCI

富加宜

Schottky Barrier Diodes

Features ◇ Small surface mounting type. ◇ Small package. ◇ Low forward voltage:VF=0.23V(typ). Applications ◇ For general purpose applications.

文件：247.65 Kbytes 页数：1 Pages

LUGUANG

鲁光电子

Zener Diode

Features ◇ Planar Die Construction ◇ 200mW Power Dissipation ◇ Zener Voltages from 2.4V - 39V ◇ Ultra-Small Surface Mount Package Power dissipation

文件：249.87 Kbytes 页数：3 Pages

LUGUANG

鲁光电子

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.3 A Collector-base voltage V(BR)CBO: -310 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：125.86 Kbytes 页数：1 Pages

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永而佳

SWITCHING DIODE

FEATURES Power dissipation PD : 200 mW（ Tamb=25℃） Collector current IF : 150 mA Collector-base voltage VR : 75 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

文件：546.84 Kbytes 页数：3 Pages

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SWITCHING DIODE

FEATURES Power dissipation PD : 200 mW（ Tamb=25℃） Collector current IO : 150 mA Collector-base voltage VR : 75 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

文件：143.76 Kbytes 页数：3 Pages

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TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：83.74 Kbytes 页数：1 Pages

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TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 100 mW (Tamb=25℃) Collector current ICM: 500 mA Collector-base voltage V(BR)CBO: 35 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：130.639 Kbytes 页数：1 Pages

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TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.15 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

文件：124.09 Kbytes 页数：2 Pages

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TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current BASE ICM: 0.2 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：131.18 Kbytes 页数：1 Pages

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