Schottky Diode

Features ◇ Low Forward Voltage ◇ Fast Switching

文件：314.67 Kbytes 页数：2 Pages

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鲁光电子

Surface Mount Switching Diodes

Features ◇ Fast trr

文件：253.33 Kbytes 页数：2 Pages

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鲁光电子

Schottoky Diode

Features ◇ Low forward voltage : VF=0.38V(typ.) ◇ Low reverse current : IR=50uA(max) ◇ Small total capacitance : CT =46pF(typ.)

文件：257.959 Kbytes 页数：2 Pages

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鲁光电子

Switching Diode

Features ◇ For high-speed switching applications ◇ Connected in series

文件：335.85 Kbytes 页数：3 Pages

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Dual Surface Mount Switching Diodes

Features ◇ For types of packaging are available. ◇ High speed switching. ◇ Suitable for high packing density layout. ◇ High reliability. Applications ◇ For general purpose switching applications.

文件：447.88 Kbytes 页数：2 Pages

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鲁光电子

Surface Mount Switching Diodes

Features ◇ Fast trr

文件：250.29 Kbytes 页数：2 Pages

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鲁光电子

Schottky Barrier Diodes

Features Very low capacitance-less than 1.0Pf @zero volts. Low forward voltage-0.5 Voltage(Typ.) @IF=10mA. Applications —For UHF mixer applications. — —

文件：254.28 Kbytes 页数：2 Pages

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TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.3 A Collector-base voltage V(BR)CBO: 310 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：66.63 Kbytes 页数：1 Pages

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TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：142.73 Kbytes 页数：1 Pages

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SWITCHING DIODE

FEATURES Power dissipation PD : 200 mW（ Tamb=25℃） Collector current IO : 150 mA Collector-base voltage VR : 75 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

文件：167.16 Kbytes 页数：3 Pages

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