Dual 2-Input NAND Gate With Open-Drain Outputs

1FEATURES 2• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 4 ns at 3.3 V • Low Power Consumption, 10-μA Max I CC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：525.31 Kbytes 页数：18 Pages

TI

德州仪器

DUAL 2 INPUT NAND GATE WITH OPEN DRAIN OUTPUT

文件：255.74 Kbytes 页数：11 Pages

TI

德州仪器

具有漏极开路输出的 2 通道、2 输入、1.65V 至 5.5V 与非门

The SN74LVC2G38 is designed for 1.65-V to 5.5-V VCC operation. This device is a dual two-input NAND buffer gate with open-drain outputs. It performs the Boolean function Y = A • B or Y = A + B in positive logic. NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the • Available in the Texas Instruments NanoFree Package\n• Inputs Accept Voltages to 5.5 V\n• Low Power Consumption, 10-μA Max ICC \n• Typical VOLP (Output Ground Bounce) CC = 3.3 V, TA = 25°C\n• Ioff Supports Live insertion, Partial-Power-Down Mode Operation and Back Drive Protection\n• ESD Protectio;

TI

德州仪器

丝印：2WR5；Package：SSOP；Dual 2-Input NAND Gate With Open-Drain Outputs

1FEATURES 2• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 4 ns at 3.3 V • Low Power Consumption, 10-μA Max I CC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：525.31 Kbytes 页数：18 Pages

TI

德州仪器

丝印：2WR5；Package：SSOP；Dual 2-Input NAND Gate With Open-Drain Outputs

1FEATURES 2• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 4 ns at 3.3 V • Low Power Consumption, 10-μA Max I CC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：525.31 Kbytes 页数：18 Pages

TI

德州仪器

丝印：C38J；Package：VSSOP；Dual 2-Input NAND Gate With Open-Drain Outputs

1FEATURES 2• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 4 ns at 3.3 V • Low Power Consumption, 10-μA Max I CC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：525.31 Kbytes 页数：18 Pages

TI

德州仪器

丝印：C38J；Package：VSSOP；Dual 2-Input NAND Gate With Open-Drain Outputs

1FEATURES 2• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 4 ns at 3.3 V • Low Power Consumption, 10-μA Max I CC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：525.31 Kbytes 页数：18 Pages

TI

德州仪器

丝印：C38J；Package：VSSOP；Dual 2-Input NAND Gate With Open-Drain Outputs

1FEATURES 2• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 4 ns at 3.3 V • Low Power Consumption, 10-μA Max I CC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：525.31 Kbytes 页数：18 Pages

TI

德州仪器

丝印：C38J；Package：VSSOP；Dual 2-Input NAND Gate With Open-Drain Outputs

1FEATURES 2• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 4 ns at 3.3 V • Low Power Consumption, 10-μA Max I CC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：525.31 Kbytes 页数：18 Pages

TI

德州仪器

DUAL 2 INPUT NAND GATE WITH OPEN DRAIN OUTPUT

文件：255.74 Kbytes 页数：11 Pages

TI

德州仪器