丝印：2WR5；Package：SSOP；Dual 2-Input NAND Gate With Open-Drain Outputs

1FEATURES 2• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 4 ns at 3.3 V • Low Power Consumption, 10-μA Max I CC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：525.31 Kbytes 页数：18 Pages

TI

德州仪器

DUAL 2 INPUT NAND GATE WITH OPEN DRAIN OUTPUT

文件：255.74 Kbytes 页数：11 Pages

TI

德州仪器

Dual 2-Input NAND Gate With Open-Drain Outputs

1FEATURES 2• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 4 ns at 3.3 V • Low Power Consumption, 10-μA Max I CC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：525.31 Kbytes 页数：18 Pages

TI

德州仪器

Dual 2-Input NAND Gate With Open-Drain Outputs

1FEATURES 2• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 4 ns at 3.3 V • Low Power Consumption, 10-μA Max I CC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：525.31 Kbytes 页数：18 Pages

TI

德州仪器