SN74CBT3306C中文资料具有 –2V 下冲保护的 5V、1:1 (SPST)、2 通道 FET 总线开关（低电平有效）数据手册TI规格书

描述 Description

The SN74CBT3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3306C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT3306C is organized as two 1-bit bus switches with separate output-enable (1OE\\, 2OE\\) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE\\ is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\\ is high, the associated 1-bit bus switch is OFF, and the high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE\\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CBT3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3306C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT3306C is organized as two 1-bit bus switches with separate output-enable (1OE\\, 2OE\\) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE\\ is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\\ is high, the associated 1-bit bus switch is OFF, and the high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE\\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

特性 Features

• Undershoot Protection for Off-Isolation on A and B Ports Up to –2 V
• Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
• Data and Control Inputs Provide Undershoot Clamps Diodes
• VCC Operating Range From 4 V to 5.5 V
• Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
• 2000-V Human-Body Model (A114-B, Class II)
• Supports Both Digital and Analog Applications: USB Interface, Bus Isolation, Low-Distortion Signal Gating