10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

文件：397.86 Kbytes 页数：12 Pages

TI

德州仪器

10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

文件：397.86 Kbytes 页数：12 Pages

TI

德州仪器

10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

文件：397.86 Kbytes 页数：12 Pages

TI

德州仪器

10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

文件：397.86 Kbytes 页数：12 Pages

TI

德州仪器

10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

文件：397.86 Kbytes 页数：12 Pages

TI

德州仪器

10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

文件：397.86 Kbytes 页数：12 Pages

TI

德州仪器

10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

文件：397.86 Kbytes 页数：12 Pages

TI

德州仪器

10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

文件：74.25 Kbytes 页数：5 Pages

TI

德州仪器

10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

文件：397.86 Kbytes 页数：12 Pages

TI

德州仪器

具有三态输出的 10 通道、4.5V 至 5.5V 缓冲器

These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide high-performance bus interface for wide data paths or buses carrying parity.The 3-state control gate is a 2-input AND gate with active-low inputs so if either outpu • BiCMOS Design Substantially Reduces ICCZ \n• Output Ports Have Equivalent 25- Resistors; No External Resistors Are Required \n• Specifically Designed to Drive MOS DRAMs \n• 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers \n• Flow-Through Architecture Optimizes PCB Layout \n• Pow;

TI

德州仪器