SN74BCT2827C

10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

BiCMOSDesignSubstantiallyReducesICCZ OutputPortsHaveEquivalent25-Ω Resistors;NoExternalResistorsAre Required SpecificallyDesignedtoDriveMOSDRAMs 3-StateOutputsDriveBusLinesorBuffer MemoryAddressRegisters Flow-ThroughArchitectureOptimizes PCBLayout Power-UpHigh

SN74BCT2827C

具有三态输出的 10 通道、4.5V 至 5.5V 缓冲器; • BiCMOS Design Substantially Reduces ICCZ \n• Output Ports Have Equivalent 25- Resistors; No External Resistors Are Required \n• Specifically Designed to Drive MOS DRAMs \n• 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers \n• Flow-Through Architecture Optimizes PCB Layout \n• Power-Up High-Impedance State \n• ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015 \n• Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT);

These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide high-performance bus interface for wide data paths or buses carrying parity.The 3-state control gate is a 2-input AND gate with active-low inputs so if either output-enable ( or ) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down.The SN54BCT2827C is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74BCT2827C is characterized for operation from 0°C to 70°C.

SN74BCT2827C

10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

SN74BCT2827C

10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

SN74BCT2827C

10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

SN74BCT2827CDW

丝印：BCT2827C；Package：SOIC；10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

BiCMOSDesignSubstantiallyReducesICCZ OutputPortsHaveEquivalent25-Ω Resistors;NoExternalResistorsAre Required SpecificallyDesignedtoDriveMOSDRAMs 3-StateOutputsDriveBusLinesorBuffer MemoryAddressRegisters Flow-ThroughArchitectureOptimizes PCBLayout Power-UpHigh

SN74BCT2827CDW.A

丝印：BCT2827C；Package：SOIC；10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

BiCMOSDesignSubstantiallyReducesICCZ OutputPortsHaveEquivalent25-Ω Resistors;NoExternalResistorsAre Required SpecificallyDesignedtoDriveMOSDRAMs 3-StateOutputsDriveBusLinesorBuffer MemoryAddressRegisters Flow-ThroughArchitectureOptimizes PCBLayout Power-UpHigh

SN74BCT2827CDW

10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

SN74BCT2827CDW

10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

SN74BCT2827CDWE4

10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS