25-W OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

• State-of-the-Art BiCMOS Design Significantly Reduces ICCZ • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) • Designed to Facilitate Incident-Wave Switching for Line Impedances of 25 W or Greater • Distributed VCC and GN

文件：229.96 Kbytes 页数：9 Pages

TI

德州仪器

25-ohm OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

文件：73.84 Kbytes 页数：5 Pages

TI

德州仪器

25-W OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

文件：427.09 Kbytes 页数：12 Pages

TI

德州仪器

具有三态输出的 8 通道、4.5V 至 5.5V 缓冲器

These 25- octal buffers and line drivers are designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters.These buffers are capable of sinking 188-mA IOL, which facilitates switching 25- transmission l • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ \n• ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) \n• Designed to Facilitate Incident-Wave Switching for Line Impedances of 25 or Greater \n• Distributed VCC and GND Pins ;

TI

德州仪器

丝印：BCT25244；Package：SOIC；25-W OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

• State-of-the-Art BiCMOS Design Significantly Reduces ICCZ • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) • Designed to Facilitate Incident-Wave Switching for Line Impedances of 25 W or Greater • Distributed VCC and GN

文件：229.96 Kbytes 页数：9 Pages

TI

德州仪器

丝印：BCT25244；Package：SOIC；25-W OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

• State-of-the-Art BiCMOS Design Significantly Reduces ICCZ • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) • Designed to Facilitate Incident-Wave Switching for Line Impedances of 25 W or Greater • Distributed VCC and GN

文件：229.96 Kbytes 页数：9 Pages

TI

德州仪器

丝印：BCT25244；Package：SOIC；25-W OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

• State-of-the-Art BiCMOS Design Significantly Reduces ICCZ • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) • Designed to Facilitate Incident-Wave Switching for Line Impedances of 25 W or Greater • Distributed VCC and GN

文件：229.96 Kbytes 页数：9 Pages

TI

德州仪器

25-W OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

文件：427.09 Kbytes 页数：12 Pages

TI

德州仪器

25-ohm OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

文件：73.84 Kbytes 页数：5 Pages

TI

德州仪器

25-W OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

文件：427.09 Kbytes 页数：12 Pages

TI

德州仪器