SN74AUP1G资料使用说明书库存现货TI第2页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
SN74AUP1G00DCKR	文件：2.44241 Mbytes Page：50 Pages	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp 文件：2.44241 Mbytes 页数：50 Pages	TI 德州仪器	TI
SN74AUP1G00DCKR.B	文件：2.44241 Mbytes Page：50 Pages	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp 文件：2.44241 Mbytes 页数：50 Pages	TI 德州仪器	TI
SN74AUP1G00DCKRG4	文件：2.44241 Mbytes Page：50 Pages	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp 文件：2.44241 Mbytes 页数：50 Pages	TI 德州仪器	TI
SN74AUP1G00DCKRG4.B	文件：2.44241 Mbytes Page：50 Pages	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp 文件：2.44241 Mbytes 页数：50 Pages	TI 德州仪器	TI
SN74AUP1G00DCKR-TP	文件：5.50581 Mbytes Page：10 Pages	SINGLE 2-INPUT NAND GATE Features « Wide supply voltage range from 0.8V to 3.6V « Inputs accept voltages up to 3.6V o lorr Supports partial-power-down mode « Low static power consumption; lcc=0.5pA (Max.) » ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) -1000-V Charg 文件：5.50581 Mbytes 页数：10 Pages	TECHPUBLIC 台舟电子	TECHPUBLIC
SN74AUP1G00DCKT	文件：2.44241 Mbytes Page：50 Pages	丝印：HAR；Package：SC70(DCK)；SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp 文件：2.44241 Mbytes 页数：50 Pages	TI 德州仪器	TI
SN74AUP1G00DCKT.B	文件：2.44241 Mbytes Page：50 Pages	丝印：HAR；Package：SC70(DCK)；SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp 文件：2.44241 Mbytes 页数：50 Pages	TI 德州仪器	TI
SN74AUP1G00DPW	文件：2.44241 Mbytes Page：50 Pages	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp 文件：2.44241 Mbytes 页数：50 Pages	TI 德州仪器	TI
SN74AUP1G00DPWR	文件：2.44241 Mbytes Page：50 Pages	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp 文件：2.44241 Mbytes 页数：50 Pages	TI 德州仪器	TI
SN74AUP1G00DPWR.B	文件：2.44241 Mbytes Page：50 Pages	SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate 1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp 文件：2.44241 Mbytes 页数：50 Pages	TI 德州仪器	TI

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技术参数

Supply voltage (Min) (V)：
0.8
Supply voltage (Max) (V)：
3.6
Number of channels (#)：
1
Inputs per channel：
1
IOL (Max) (mA)：
4
IOH (Max) (mA)：
-4
Input type：
Standard CMOS
Output type：
Push-Pull
Features：
Partial power down (Ioff)
Data rate (Max) (Mbps)：
100
Rating：
Catalog

供应商	型号	品牌	批号	封装	库存	备注	价格
齐创科技(上海,北京,青岛)有限公司	SN74AUP1G97DCKRG4	TI	23+	SOT363	5000	原装正品,假一罚十	询价
深圳市一线半导体有限公司	SN74AUP1G08DCKR	TEXAS/TI/德州	24+	SOT-353SOT-323-5	9200	新进库存/原装	询价
中天科工半导体（深圳）有限公司	SN74AUP1G79DRLR	TI	20+	SOT-553	36000	原装优势主营型号-可开原型号增税票	询价
深圳市英卓尔科技有限公司	SN74AUP1G04DRLR	TI	20+	SOT553	4000	英卓尔原装现货!0755-82566558真实库存!	询价
深圳市利加科技有限公司	SN74AUP1G14DBVR	TI	16+	NA	8800	原装现货,货真价优	询价
深圳市科雨电子有限公司	SN74AUP1G08YZPR	TI	25+	BGA-5	9854	就找我吧!--邀您体验愉快问购元件!	询价
深圳市豪迈兴电子有限公司	SN74AUP1G74DCURG4	TI	24+	US8	6232	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市华斯顿科技有限公司	SN74AUP1G125DSFR	TI原装一盘5K	25+23+	XFDFN-6	18733	绝对原装正品全新进口深圳现货	询价
深圳市恒创达实业有限公司	SN74AUP1G34DCK	TI	2021	BGA	1000	全新、原装	询价
深圳市恒达亿科技有限公司	SN74AUP1G14DCKR	TI	25+	SC70	4500	全新原装、诚信经营、公司现货销售!	询价

更多SN74AUP1G供应商更新时间2026-2-3 15:35:00

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