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SN74AUP1G00DCKR

SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate

1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp

文件:2.44241 Mbytes 页数:50 Pages

TI

德州仪器

SN74AUP1G00DCKR

LOW-POWER SINGLE 2-INPUT POSITIVE-NAND GATE

文件:314.45 Kbytes 页数:14 Pages

TI

德州仪器

SN74AUP1G00DCKR

LOW-POWER SINGLE 2-INPUT POSITIVE-NAND GATE

文件:551.68 Kbytes 页数:17 Pages

TI

德州仪器

SN74AUP1G00DCKR

LOW-POWER SINGLE 2-INPUT POSITIVE-NAND GATE

文件:987.18 Kbytes 页数:22 Pages

TI

德州仪器

SN74AUP1G00DCKR

Low-Power Single 2-Input Positive-NAND Gate

文件:1.70707 Mbytes 页数:36 Pages

TI

德州仪器

SN74AUP1G00DCKR.B

SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate

1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp

文件:2.44241 Mbytes 页数:50 Pages

TI

德州仪器

SN74AUP1G00DCKRG4

SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate

1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp

文件:2.44241 Mbytes 页数:50 Pages

TI

德州仪器

SN74AUP1G00DCKRG4.B

SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate

1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp

文件:2.44241 Mbytes 页数:50 Pages

TI

德州仪器

SN74AUP1G00DCKR-TP

SINGLE 2-INPUT NAND GATE

Features « Wide supply voltage range from 0.8V to 3.6V « Inputs accept voltages up to 3.6V o lorr Supports partial-power-down mode « Low static power consumption; lcc=0.5pA (Max.) » ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) -1000-V Charg

文件:5.50581 Mbytes 页数:10 Pages

TECHPUBLIC

台舟电子

SN74AUP1G00DCKRE4

LOW-POWER SINGLE 2-INPUT POSITIVE-NAND GATE

文件:987.18 Kbytes 页数:22 Pages

TI

德州仪器

产品属性

  • 产品编号:

    SN74AUP1G00DCKR

  • 制造商:

    Texas Instruments

  • 类别:

    集成电路(IC) > 门和反相器

  • 系列:

    74AUP

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 逻辑类型:

    与非门

  • 输入数:

    2

  • 电压 - 供电:

    0.8V ~ 3.6V

  • 电流 - 输出高、低:

    4mA,4mA

  • 逻辑电平 - 低:

    0.7V ~ 0.9V

  • 逻辑电平 - 高:

    1.6V ~ 2V

  • 不同 V、最大 CL 时最大传播延迟:

    6.5ns @ 3.3V,30pF

  • 工作温度:

    -40°C ~ 85°C

  • 安装类型:

    表面贴装型

  • 供应商器件封装:

    SC-70-5

  • 封装/外壳:

    5-TSSOP,SC-70-5,SOT-353

  • 描述:

    IC GATE NAND 1CH 2-INP SC70-5

供应商型号品牌批号封装库存备注价格
TI/德州仪器
22+
SC-70-5
500000
原装现货支持实单价优/含税
询价
Texas Instruments
2116
NA
3000
自营现货,只做正品
询价
TI(德州仪器)
24+
SC-70-5
115048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
TI/德州仪器
25+
SC-70-5
4987
强势库存!绝对原装公司现货!
询价
TI/德州仪器
25+
SC70-5
25000
只做进口原装假一罚百
询价
TI/德州仪器
SC70-5
23+
6000
专业配单原装正品假一罚十
询价
UMW(友台半导体)
24+
SC70-5
9000
加QQ:78517935原装正品有单必成
询价
TI
24+
SOT-353
3024
询价
TI
17+
SOT-353
6200
100%原装正品现货
询价
TI
2016+
SOT-353
26081
只做原装,假一罚十,公司可开17%增值税发票!
询价
更多SN74AUP1G00DCKR供应商 更新时间2025-11-25 17:10:00