SN74AUC1G126 Single Bus Buffer Gate With Tri-state Output

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in TI's NanoFree™ Package • Optimized for 1.8-V Operation and is 3.6-V

文件：810.93 Kbytes 页数：31 Pages

TI

德州仪器

SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT

文件：247.72 Kbytes 页数：1 Pages

TI

德州仪器

SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT

文件：559.36 Kbytes 页数：14 Pages

TI

德州仪器

具有三态输出的单路 0.8V 至 2.7V 高速缓冲器

SN74AUC1G126 总线缓冲器专门针对 1.65V 至 1.95V VCC 工作范围而特别设计，但可以在 0.8V 至 2.7V VCC 的范围内工作。\n\nSN74AUC1G126 器件是一款具有一个三态输出的单通道线路驱动器。当输出使能 (OE) 输入为低电平时，输出被禁用。\n\n为确保在上电或掉电期间均处于高阻态，应将 OE 通过下拉电阻连接至 GND；该电阻的最小值取决于驱动器的拉电流能力。\n\nNanoFree™ 封装技术是器件封装概念上的一项重大突破，它将裸片用作封装。\n\n该器件完全 适用于 使用 Ioff 的局部掉电应用。Ioff 电路可禁用输出，以防在器件掉电时 • 闩锁性能超过 100mA，符合 JESD 78 II 类规范\n• 2000V 人体放电模型 (A114-A)\n• 1000V 充电器件模型 (C101)\n• 采用 TI 的 NanoFree™封装\n• Ioff 支持局部关断模式和后驱动保护\n• 1.8V 时 tpd 最大值为 2.5ns\n• 电压为 1.8V 时，输出驱动为 ±8mA;

TI

德州仪器

SN74AUC1G126 Single Bus Buffer Gate With Tri-state Output

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in TI's NanoFree™ Package • Optimized for 1.8-V Operation and is 3.6-V

文件：810.93 Kbytes 页数：31 Pages

TI

德州仪器

丝印：U26R；Package：SOT-23；SN74AUC1G126 Single Bus Buffer Gate With Tri-state Output

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in TI's NanoFree™ Package • Optimized for 1.8-V Operation and is 3.6-V

文件：810.93 Kbytes 页数：31 Pages

TI

德州仪器

丝印：U26R；Package：SOT-23；SN74AUC1G126 Single Bus Buffer Gate With Tri-state Output

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in TI's NanoFree™ Package • Optimized for 1.8-V Operation and is 3.6-V

文件：810.93 Kbytes 页数：31 Pages

TI

德州仪器

SN74AUC1G126 Single Bus Buffer Gate With Tri-state Output

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in TI's NanoFree™ Package • Optimized for 1.8-V Operation and is 3.6-V

文件：810.93 Kbytes 页数：31 Pages

TI

德州仪器

丝印：UNR；Package：SC70；SN74AUC1G126 Single Bus Buffer Gate With Tri-state Output

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in TI's NanoFree™ Package • Optimized for 1.8-V Operation and is 3.6-V

文件：810.93 Kbytes 页数：31 Pages

TI

德州仪器

丝印：UNR；Package：SC70；SN74AUC1G126 Single Bus Buffer Gate With Tri-state Output

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in TI's NanoFree™ Package • Optimized for 1.8-V Operation and is 3.6-V

文件：810.93 Kbytes 页数：31 Pages

TI

德州仪器