SN74AUC1G04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：1.77036 Mbytes 页数：30 Pages

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德州仪器

SINGLE INVERTER GATE

文件：708.69 Kbytes 页数：16 Pages

TI

德州仪器

SINGLE INVERTER GATE

文件：309.66 Kbytes 页数：12 Pages

TI

德州仪器

单路 0.8V 至 2.7V 高速反相器

This single inverter gate is operational at 0.8-V to 2.7-V VCC, but is designed specifically for 1.65-V to 1.95-V VCC operation.\n\nThe SN74AUC1G04 performs the Boolean function Y = A.\n\nNanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package.\n\n • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II\n• 2000-V Human-Body Model (A114-A)\n• 1000-V Charged-Device Model (C101)\n• Available in the Texas Instruments NanoFree™ Package\n• Ioff Supports Partial Power Down Mode and Back Drive Protection\n• Max tpd of 2.2 ns at 1.8 V\n• ±8-mA Outp;

TI

德州仪器

SN74AUC1G04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：1.77036 Mbytes 页数：30 Pages

TI

德州仪器

丝印：U04R；Package：SOT-23(DBV)；SN74AUC1G04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：1.77036 Mbytes 页数：30 Pages

TI

德州仪器

丝印：U04R；Package：SOT-23(DBV)；SN74AUC1G04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：1.77036 Mbytes 页数：30 Pages

TI

德州仪器

丝印：U04R；Package：SOT-23(DBV)；SN74AUC1G04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：1.77036 Mbytes 页数：30 Pages

TI

德州仪器

SN74AUC1G04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：1.77036 Mbytes 页数：30 Pages

TI

德州仪器

SN74AUC1G04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：1.77036 Mbytes 页数：30 Pages

TI

德州仪器