DUAL DIFFERENTIAL DRIVERS AND RECEIVERS

1FEATURES • Meet or Exceed Standards TIA/EIA-422-B and ITU Recommendation V.11 • BiCMOS Process Technology • Low Supply-Current Requirements: 9 mA Max • Low Pulse Skew • Receiver Input Impedance . . . 17 kΩ Typ • Receiver Input Sensitivity . . . ±200 mV • Receiver Common-Mode Input Voltage

文件：921.02 Kbytes 页数：26 Pages

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德州仪器

DUAL DIFFERENTIAL DRIVERS AND RECEIVERS

文件：1.02571 Mbytes 页数：21 Pages

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德州仪器

DUAL DIFFERENTIAL DRIVERS AND RECEIVERS

文件：288.93 Kbytes 页数：14 Pages

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德州仪器

DUAL DIFFERENTIAL DRIVERS AND RECEIVERS

文件：353.2 Kbytes 页数：16 Pages

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德州仪器

DUAL DIFFERENTIAL DRIVERS AND RECEIVERS

文件：507.68 Kbytes 页数：18 Pages

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德州仪器

DUAL DIFFERENTIAL DRIVERS AND RECEIVERS

文件：606.74 Kbytes 页数：20 Pages

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德州仪器

丝印：SN65C1168N；Package：PDIP；DUAL DIFFERENTIAL DRIVERS AND RECEIVERS

1FEATURES • Meet or Exceed Standards TIA/EIA-422-B and ITU Recommendation V.11 • BiCMOS Process Technology • Low Supply-Current Requirements: 9 mA Max • Low Pulse Skew • Receiver Input Impedance . . . 17 kΩ Typ • Receiver Input Sensitivity . . . ±200 mV • Receiver Common-Mode Input Voltage

文件：921.02 Kbytes 页数：26 Pages

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德州仪器

丝印：SN65C1168N；Package：PDIP；DUAL DIFFERENTIAL DRIVERS AND RECEIVERS

文件：1.02571 Mbytes 页数：21 Pages

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德州仪器

双路差分驱动器和接收器

The SN65C1167, SN75C1167, SN65C1168, and SN75C1168 dual drivers and receivers are integrated circuits designed for balanced transmission lines. The devices meet TIA/EIA-422-B and ITU recommendation V.11.\n\n The SN65C1167 and SN75C1167 combine dual 3-state differential line drivers and 3-state diffe • Meet or Exceed Standards TIA/EIA-422-B and ITU Recommendation V.11\n• BiCMOS Process Technology\n• Low Supply-Current Requirements: 9 mA Max\n• Low Pulse Skew\n• Receiver Input Impedance . . . 17 k Typ\n• Receiver Input Sensitivity . . . ±200 mV\n• Receiver Common-Mode Input Voltage Range of .7 V ;

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德州仪器

SN65C1168E-SEP Dual Differential Drivers and Receivers With ±12-kV ESD Protection

1 Features 1• VID V62/19606 • Radiation hardened – Single event latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C – ELDRS-free to 30 krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled baseline – Gold wire – NiPdAu lead fin

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德州仪器