丝印：SN64BCT125AN；Package：PDIP；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ High-Impedance State During Power-Up and Power-Down 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883C Method 3015 Package Options Include Plastic Small-Outline (D) Pac

文件：408.28 Kbytes 页数：10 Pages

TI

德州仪器

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

文件：70.99 Kbytes 页数：5 Pages

TI

德州仪器

丝印：SN64BCT125AN；Package：PDIP；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ High-Impedance State During Power-Up and Power-Down 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883C Method 3015 Package Options Include Plastic Small-Outline (D) Pac

文件：408.28 Kbytes 页数：10 Pages

TI

德州仪器

Package：14-DIP（0.300"，7.62mm）；包装：卷带（TR） 类别：集成电路（IC） 缓冲器，驱动器，接收器，收发器 描述：IC BUF NON-INVERT 5.5V 14DIP

TI

德州仪器

Package：14-SOIC（0.209"，5.30mm 宽）；包装：散装 类别：集成电路（IC） 缓冲器，驱动器，接收器，收发器 描述：IC BUFFER NON-INVERT 5.5V 14SOP

TI

德州仪器