SN54SC8T240-SEP中文资料德州仪器数据手册PDF规格书

1 Features

• Vendor item drawing available, VID

V62/25630-01XE

• Radiation - Total Ionizing Dose (TID):

– TID characterized up to 50krad(Si)

– TID performance assurance up to 30 krad(Si)

– Radiation Lot Acceptance Testing (RLAT) for

every wafer lot up to 30krad(Si)

• Radiation - Single-Event Effects (SEE):

– Single Event Latch-Up (SEL) immune up to

50MeV-cm2/mg at 125°C

– Single Event Transient (SET) characterized up

to LET = 50MeV-cm2/mg

• Wide operating range of 1.2V to 5.5V

• Single-supply voltage translator:

– Up translation:

• 1.2V to 1.8V

• 1.5V to 2.5V

• 1.8V to 3.3V

• 3.3V to 5.0V

– Down translation:

• 5.0V, 3.3V, 2.5V to 1.8V

• 5.0V, 3.3V to 2.5V

• 5.0V to 3.3V

• 5.5V tolerant input pins

• Supports standard pinouts

• Up to 150Mbps with 5V or 3.3V VCC

• Latch-up performance exceeds 250mA per JESD

17

• Space enhanced plastic:

– Supports defense and aerospace applications

– Controlled baseline

– Au bondwire and NiPdAu lead finish

– Meets NASA ASTM E595 outgassing

specification

– One fabrication, assembly, and test site

– Extended product life cycle

– Product traceability

2 Applications

• Enable or disable a digital signal

• Controlling an indicator LED

• Translation between communication modules and

system controllers

3 Description

The SN54SC8T240-SEP device contains eight

independent inverting line drivers with 3-state outputs.

Each channel performs the Boolean function Y = A

in positive logic. The channels are grouped in sets of

four, with one OE pin controlling each set. The outputs

can be put into a hi-Z state by applying a high on the

associated OE pin.