OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：818.44 Kbytes 页数：18 Pages

TI

德州仪器

OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

文件：172.42 Kbytes 页数：10 Pages

TI

德州仪器

OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

文件：275.38 Kbytes 页数：9 Pages

TI

德州仪器

OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

文件：118.83 Kbytes 页数：6 Pages

TI

德州仪器

12-BIT LINE/MEMORY DRIVERS WITH 3-STATE OUTPUTS

Output Ports Have Equivalent 25-W Series Resistors, So No External Resistors Are Required State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：302.09 Kbytes 页数：12 Pages

TI

德州仪器

12-BIT LINE/MEMORY DRIVERS WITH 3-STATE OUTPUTS

Output Ports Have Equivalent 25-W Series Resistors, So No External Resistors Are Required State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：218.51 Kbytes 页数：9 Pages

TI

德州仪器

OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

文件：172.42 Kbytes 页数：10 Pages

TI

德州仪器

11-BIT LINE/MEMORY DRIVERS WITH 3-STATE OUTPUTS

文件：140.89 Kbytes 页数：8 Pages

TI

德州仪器

11-BIT LINE/MEMORY DRIVERS WITH 3-STATE OUTPUTS

文件：105.65 Kbytes 页数：6 Pages

TI

德州仪器

11-BIT LINE/MEMORY DRIVERS WITH 3-STATE OUTPUTS

文件：105.65 Kbytes 页数：6 Pages

TI

德州仪器