SMUN2211T1G

Digital Transistors (BRT) R1 = 10 k, R2 = 10 k

DigitalTransistors(BRT)R1=10kΩ,R2=10kΩ NPNTransistorswithMonolithicBiasResistorNetwork Thisseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBiasResistorTransistor(BRT)containsasingletransistorwithamonolith

SMUN2211T1G

Digital Transistors (BRT) R1 = 10 k, R2 = 10 k

SMUN2211T1G

Digital Transistors (BRT)

SMUN2211T1G

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-236-3，SC-59，SOT-23-3 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V 100MA SC59

MUN2211T1

NPNSILICONBIASRESISTORTRANSISTOR

Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamonolithicbiasnetworkconsistingoftworesistors;aseriesbaseresistorandabase–emitterresistor.The

MUN2211T1

NPNSILICONBIASRESISTORTRANSISTOR

MUN2211T1

BiasResistorTransistor

NPNSiliconSurfaceMountTransistorswithMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamonolithicbiasnetworkcons

MUN2211T1

BiasResistorTransistors

MUN2211T1G

BiasResistorTransistors

MUN2211T1G

DigitalTransistors(BRT)R1=10k,R2=10k

DigitalTransistors(BRT)R1=10kΩ,R2=10kΩ NPNTransistorswithMonolithicBiasResistorNetwork Thisseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBiasResistorTransistor(BRT)containsasingletransistorwithamonolith

MUN2211T1G

DigitalTransistors(BRT)R1=10k,R2=10k

MUN2211T1G

DigitalTransistors(BRT)

MUN2211T1G

NPNSILICONBIASRESISTORTRANSISTOR

UPA2211T1M

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2211T1MisP-channelMOSFieldEffectTransistordesigned forpowermanagementapplicationsofportableequipments,suchas loadswitch. FEATURES •Lowon-stateresistance RDS(on)1=25mΩMAX.(VGS=−4.5V,ID=−7.5A) RDS(on)2=34mΩMAX.(VGS=−2.5V,ID=−3.8A)