TIP126

Plastic-EncapsulatedTransistors

PLASTICPOWERTRANSISTORS HighPowerSwitching,HammerDrive,PulseMotorDriveandInductiveLoadDriveApplications

TIP126

PLASTICPOWERTRANSISTORS

PLASTICPOWERTRANSISTORS HighPowerSwitching,HammerDrive,PulseMotorDriveandInductiveLoadDriveApplications

TIP126

DarlingtonPowerTransistors(PNP)

DarlingtonPowerTransistors(PNP) Features •Designedforgeneral-purposeamplifierandlowspeed switchingapplications •RoHSCompliant

TIP126

POWERTRANSISTORS(5.0A,60-100V,65W)

...designedforgeneral−purposeamplifierandlow−speedswitchingapplications. FEATURES: •Collector−EmitterSustainingVoltage− VCEO(sus)=60V(Min)−TIP120,TIP125 =80V(Min)−TIP121,TIP126 =100V(Min)−TIP122,TIP127 •LowColl

TIP126

DARLINGTON5AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS

PlasticMedium-PowerComplementarySiliconTransistors ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2500(Typ)@IC=4.0Adc •Collector–EmitterSustainingVoltage—@100mAdc VCEO(sus)=60Vdc(Min)—TIP12

TIP126

PNPSILICONPOWERDARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewith TIP120,TIP121andTIP122 ●65Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●MinimumhFEof1000at3V,3A

TIP126

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration.Theresultingtransistorsshowexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Lowcollector-emittersaturationvoltage ■Comp

TIP126

PNP(MEDIUMPOWERLINEARSWITCHINGAPPLICATIONS)

MEDIUMPOWERLINEARSWITCHINGAPPLICATIONS •ComplementtoTIP121

TIP126

MediumPowerLinearSwitchingApplications

PNPEpitaxialDarlingtonTransistor Features •MediumPowerLinearSwitchingApplications •ComplementarytoTIP120/TIP121/TIP122

TIP126

Si-EpitaxialPlanarTransistors

Si-EpitaxialPlanarTransistors •Collectorcurrent5A •PlasticcaseTO-220AB •Weightapprox.2.2g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

TIP126

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltIn Base-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-3A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP120/121/122

TIP126

SiliconPNPDarlingtonPowerTransistors

Features •MountingTorgue:5in-lbsMaximum •ThecomplementaryNPNtypesaretheTIP121/2/3respectively •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •

TIP126

SiliconPNPDarlingtonPowerTransistors

DESCRIPTION •WithTO-220Cpackage •DARLNGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP120/121/122 APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

TIP126

PNP/NPNSiliconPowerTransistor

FEATURES: *MediumPowerComplementarysilicontransistors *TIP120,121,122DarlingtonTRANSISTOR(NPN) *TIP125,126,127DarlingtonTRANSISTOR(PNP)

TIP126

ComplementarypowerDarlingtontransistors

TIP126

BASENPN/PNP

EPITAXIALBASENPN/PNP POWERDARLINGTONS

TIP126

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •WithTO-220Cpackage •DARLNGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP120/121/122 APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

TIP126

TO-220-3LPlastic-EncapsulateTransistors

TO-220-3LPlastic-EncapsulateTransistors TIP120,121,122DarlingtonTRANSISTOR(NPN) TIP125,126,127DarlingtonTRANSISTOR(PNP) FEATURES ●MediumPowerComplementarySiliconTransistors

TIP126

SiliconPNPDarlingtonPowerTransistors

TIP126

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220 enveloppe.Theyareintendedforuseinpowerlinearandswitchingapplications. NPNcomplementsareTIP120-121-122 CompliancetoRoHS.