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22N50

FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOK22N50

500V,22AN-ChannelMOSFET

GeneralDescription TheAOK22N50isfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchecapabilitythispartscanbead

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK22N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOK22N50L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT22N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT22N50

500V,22AN-ChannelMOSFET

GeneralDescription TheAOT22N50&AOTF22N50havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchcapabili

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF22N50

500V,22AN-ChannelMOSFET

GeneralDescription TheAOT22N50&AOTF22N50havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchcapabili

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF22N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP22N50N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.22Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP22N50N

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP22N50N

N-ChannelMOSFET500V,22A,0.22廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFBA22N50

PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=24A)

Applications 1.SwitchModePowerSupply(SMPS) 2.UninterruptiblePowerSupply 3.HighSpeedPowerSwitching Benefits 1.LowGateChargeQgresultsinSimpleDriveRequirement 2.ImprovedGate,AvalancheandDynamicdv/dtRuggedness 3.FullyCharacterizedCapacitan

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFBA22N50A

PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=24A)

Applications 1.SwitchModePowerSupply(SMPS) 2.UninterruptiblePowerSupply 3.HighSpeedPowerSwitching Benefits 1.LowGateChargeQgresultsinSimpleDriveRequirement 2.ImprovedGate,AvalancheandDynamicdv/dtRuggedness 3.FullyCharacterizedCapacitan

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFBA22N50APBF

HEXFET짰PowerMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP22N50A

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •UninterruptablePowerS

VishayVishay Siliconix

威世科技

IRFP22N50A

PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=22A)

Applications SwitchModePowerSupply(SMPS) UninterruptIblePowerSupply HighSpeedPowerSwitching Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP22N50A

PowerMOSFET

VishayVishay Siliconix

威世科技

IRFP22N50A

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.23Ω(MAX) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFP22N50A

PowerMOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note

VishayVishay Siliconix

威世科技

IRFP22N50A

PowerMOSFET

VishayVishay Siliconix

威世科技

供应商型号品牌批号封装库存备注价格
昂斯美
23+
TO-TO-220
33500
全新原装真实库存含13点增值税票!
询价
昂斯美
23+
TO-220
10000
公司只做原装正品
询价
昂斯美
22+
TO-220
6000
十年配单,只做原装
询价
昂斯美
TO-220
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
昂斯美
22+
TO-220
25000
只做原装进口现货,专注配单
询价
昂斯美
24+25+/26+27+
TO-220-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
SAMBU
23+
SMD
50000
全新原装正品现货,支持订货
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SAMBU
23+
NA/
4500
优势代理渠道,原装正品,可全系列订货开增值税票
询价
CJ
21+
42664
12588
全新原装深圳现货
询价
CJ/长电
1833+
SOT23
2793
原装现货!天天特价!随时可以货!
询价
更多SMT22N50供应商 更新时间2024-6-5 15:30:00