首页 >IRFBA22N50APBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRFBA22N50APBF | HEXFET짰Power MOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | ||
500V,22AN-ChannelMOSFET GeneralDescription TheAOK22N50isfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchecapabilitythispartscanbead | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 |  | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
500V,22AN-ChannelMOSFET GeneralDescription TheAOT22N50&AOTF22N50havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchcapabili | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | ||
500V,22AN-ChannelMOSFET GeneralDescription TheAOT22N50&AOTF22N50havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchcapabili | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.22Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | ||
N-ChannelMOSFET500V,22A,0.22廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=24A) Applications 1.SwitchModePowerSupply(SMPS) 2.UninterruptiblePowerSupply 3.HighSpeedPowerSwitching Benefits 1.LowGateChargeQgresultsinSimpleDriveRequirement 2.ImprovedGate,AvalancheandDynamicdv/dtRuggedness 3.FullyCharacterizedCapacitan | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=24A) Applications 1.SwitchModePowerSupply(SMPS) 2.UninterruptiblePowerSupply 3.HighSpeedPowerSwitching Benefits 1.LowGateChargeQgresultsinSimpleDriveRequirement 2.ImprovedGate,AvalancheandDynamicdv/dtRuggedness 3.FullyCharacterizedCapacitan | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=22A) Applications SwitchModePowerSupply(SMPS) UninterruptIblePowerSupply HighSpeedPowerSwitching Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •UninterruptablePowerS | VishayVishay Siliconix 威世科技 |  | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.23Ω(MAX) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
PowerMOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note | VishayVishay Siliconix 威世科技 | | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | |
详细参数
- 型号：
IRFBA22N50APBF
- 功能描述：
MOSFET N-Chan 500V 24 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
Vishay |
23+ |
SUPER-TO-220 |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
IR/VISH |
21+ |
65230 |
询价 | ||||
VISHAY |
1503+ |
SUPER-220? |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
VISHAY/威世 |
23+ |
SUPER-220 |
10000 |
公司只做原装正品 |
询价 | ||
Vishay Siliconix |
22+ |
Super220? |
9000 |
原厂渠道,现货配单 |
询价 | ||
Vishay Siliconix |
21+ |
Super220? |
13880 |
公司只售原装,支持实单 |
询价 | ||
Vishay Siliconix |
2022+ |
Super220? |
6680 |
原厂原装，欢迎咨询 |
询价 | ||
Vishay |
23+ |
SUPER-220 |
6000 |
原装正品，支持实单 |
询价 | ||
Vishay Siliconix |
2022+ |
Super-220? |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
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