SMJ28F010B数据手册Austin Semiconductor中文资料规格书

描述 Description

description
The SMJ28F010B is a 1048576-bit, programmable read-only memory that can be electrically bulk-erased and reprogrammed. It is available in 10000 program/erase-endurance-cycle version.
The SMJ28F010B flash memory is offered in a 32-lead ceramic 600-mil side-braze dual in-line package (DIP) (JDD suffix) and a leadless ceramic chip carrier (FE suffix).
• Organization . . . 131072 × 8-Bit Flash Memory
• Pin Compatible With Existing 1M-bit EPROMs
• High-Reliability MIL-PRF-38535 Processing
• VCC Tolerance ±10%
• All Inputs/Outputs TTL Compatible
• Maximum Access/Minimum Cycle Time
   28F010B-12 120 ns
   ’28F010B-15 150 ns
   ’28F010B-20 200 ns
• Industry-Standard Programming Algorithm
• 10000 Program/Erase-Cycle
• Latchup Immunity of 250 mA on All Input and Output Lines
• Low Power Dissipation (VCC = 5.5 V)
   –Active Write . . . 55 mW
   –Active Read . . . 165 mW
   –Electrical Erase . . . 82.5 mW
   –Standby . . . 0.55 mW (CMOS-Input Levels)
• Military Temperature Range
   – 55°C to 125°C