丝印：FK；Package：SOD-123FL；TRANSIENT VOLTAGE SUPPRESSOR

Features · Glass passivated chip · 200 W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01 · Excellent clamping capability · Low reverse leakage · Very fast response time · Lead and body according with RoHS standard

文件：332.32 Kbytes 页数：3 Pages

DAESAN

丝印：CE30；Package：SOD-123FL；TRANSIENT VOLTAGE SUPPRESSOR

文件：1.01244 Mbytes 页数：4 Pages

CHENDA

辰达半导体

Surface mount transient voltage suppressor power 200 watts

RM TECHNOLOGY

瑞美科

N-Channel Silicon Junction Field-Effect Transistors

Small Outline (Surface Mount) Package Devices

文件：213.13 Kbytes 页数：10 Pages

InterFET

N-Channel Silicon Junction Field-Effect Transistors

Small Outline (Surface Mount) Package Devices

文件：213.13 Kbytes 页数：10 Pages

InterFET

N-Channel Silicon Junction Field-Effect Transistors

Small Outline (Surface Mount) Package Devices

文件：213.13 Kbytes 页数：10 Pages

InterFET