3.0 AMP LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop

文件：70.99 Kbytes 页数：2 Pages

GWSEMI

唯圣电子

N-channel Enhancement Mode Power MOSFET

Features VDS= 30V, ID= 80A RDS(ON)

文件：3.64235 Mbytes 页数：5 Pages

BYCHIP

百域芯

SCHOTTKY DIODE REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 3.0A

DESCRIPTION The SM 32 0A SM 32 00A are available in SM A p ackage. FEATURES  Metal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, high frequency inverte

文件：722.25 Kbytes 页数：5 Pages

AITSEMI

创瑞科技

SCHOTTKY DIODES REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A

DESCRIPTION The SM3 2 0 AF ~SM320 0 AF is available in SMAF p a ckage FEATURES  M etal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, high frequency i

文件：598.95 Kbytes 页数：5 Pages

AITSEMI

创瑞科技

SCHOTTKY DIODE REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A

DESCRIPTION The SM320B~SM3200B are available in SMB Package. FEATURES  Metal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, high frequency inverters, fre

文件：392.07 Kbytes 页数：5 Pages

AITSEMI

创瑞科技

SCHOTTKY DIODE REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A

DESCRIPTION The SM3 2 0 B F ~SM320 0 B F are available in SM B F p a ckage FEATURES  M etal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, hig h freque

文件：451.12 Kbytes 页数：5 Pages

AITSEMI

创瑞科技

丝印：SM320C25GBM；Package：CPGA；DIGITAL SIGNAL PROCESSOR

Military Temperature Range – –55°C to 125°C 100-ns or 80-ns Instruction Cycle Times 544 Words of Programmable On-Chip Data RAM 4K Words of On-Chip Program ROM 128K Words of Data/Program Space 16 Input and 16 Output Channels 16-Bit Parallel Interface Directly Accessible External Data Memor

文件：808.76 Kbytes 页数：40 Pages

TI

德州仪器

丝印：SM320C25GBM；Package：CPGA；DIGITAL SIGNAL PROCESSOR

Military Temperature Range – –55°C to 125°C 100-ns or 80-ns Instruction Cycle Times 544 Words of Programmable On-Chip Data RAM 4K Words of On-Chip Program ROM 128K Words of Data/Program Space 16 Input and 16 Output Channels 16-Bit Parallel Interface Directly Accessible External Data Memor

文件：808.76 Kbytes 页数：40 Pages

TI

德州仪器

丝印：SM320C32PCMM50EP；Package：QFP；DIGITAL SIGNAL PROCESSOR

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† High-Performance Floating-Point Digital Signal Proce

文件：686.98 Kbytes 页数：46 Pages

TI

德州仪器

丝印：SM320C32PCMM50EP；Package：QFP；DIGITAL SIGNAL PROCESSOR

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† High-Performance Floating-Point Digital Signal Proce

文件：686.98 Kbytes 页数：46 Pages

TI

德州仪器