SCHOTTKY DIODE REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 3.0A

DESCRIPTION The SM 32 0A SM 32 00A are available in SM A p ackage. FEATURES  Metal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, high frequency inverte

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AITSEMI

创瑞科技

SCHOTTKY DIODES REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A

DESCRIPTION The SM3 2 0 AF ~SM320 0 AF is available in SMAF p a ckage FEATURES  M etal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, high frequency i

文件：598.95 Kbytes 页数：5 Pages

AITSEMI

创瑞科技

LOW-NOISE, HIGH-OUTPUT DRIVE, CURRENT-FEEDBACK, OPERATIONAL AMPLIFIERS

文件：916.74 Kbytes 页数：28 Pages

TI

德州仪器

LOW-NOISE, HIGH-OUTPUT DRIVE, CURRENT-FEEDBACK, OPERATIONAL AMPLIFIERS

文件：916.74 Kbytes 页数：28 Pages

TI

德州仪器

ULTRA FAST RECOVERY RECTIFIER

文件：206.84 Kbytes 页数：4 Pages

MICROSEMI

美高森美