SCHOTTKY DIODE REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 3.0A

DESCRIPTION The SM 32 0A SM 32 00A are available in SM A p ackage. FEATURES  Metal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, high frequency inverte

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SCHOTTKY DIODES REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A

DESCRIPTION The SM3 2 0 AF ~SM320 0 AF is available in SMAF p a ckage FEATURES  M etal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, high frequency i

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SCHOTTKY DIODE REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A

DESCRIPTION The SM320B~SM3200B are available in SMB Package. FEATURES  Metal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, high frequency inverters, fre

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AITSEMI

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SCHOTTKY DIODE REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A

DESCRIPTION The SM3 2 0 B F ~SM320 0 B F are available in SM B F p a ckage FEATURES  M etal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, hig h freque

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N-Channel Enhancement Mode MOSFET

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SINOPWER

大中集成电路