N-Channel Enhancement Mode MOSFET

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High Power and current handing capability

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SILIKRON

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N-Channel Enhancement Mode Power Mos.FET

DESCRIPTION • The SST2610 uses advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. • It is universally used for all commercial-industrial applications. APPLICATIONS • Low on-resistance • Capable of 2.5V gate drive

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SECOS

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N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested

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