High Power and current handing capability

文件：350.57 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

MOSFET

Silikron

新硅能微电子

N-Channel Enhancement Mode Power Mos.FET

DESCRIPTION • The SST2610 uses advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. • It is universally used for all commercial-industrial applications. APPLICATIONS • Low on-resistance • Capable of 2.5V gate drive

文件：1.51509 Mbytes 页数：4 Pages

SECOS

喜可士

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested

文件：403.87 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N Channel Enhancement Mode MOSFET

文件：769.62 Kbytes 页数：7 Pages

STANSON

司坦森