APM2321A

P-ChannelEnhancementModeMOSFET

Features •-20V/-0.9A,RDS(ON)=370mΩ(typ.)@VGS=-4.5VRDS(ON)=560mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems.

APM2321AAC-TRL

P-Channel20-V(D-S)MOSFET

APM2321AC

P-Channel20-V(D-S)MOSFET

APM2321AC-TR

P-ChannelEnhancementModeMOSFET

Features •-20V/-0.9A,RDS(ON)=370mΩ(typ.)@VGS=-4.5VRDS(ON)=560mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems.

B2321

DesolderingTool

InstructionManual  ThankyouforpurchasingtheHAKKO475desolderingtool.PleasereadthismanualbeforeoperatingtheHAKKO475.Keepthismanualreadilyaccessibleforreference.

BC2321

Plastic-EncapsulateMOSFETS

APPLICATION PASwitch LoadSwitch FEATURE TrenchFETPowerMOSFET

BR2321W

P-ChannelMOSFETinaSOT-323PlasticPackage

CEH2321

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-4.8A,RDS(ON)=55mW@VGS=-4.5V. RDS(ON)=62mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. Lead-freeplating;RoHScompliant.

CEH2321

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-4.8A,RDS(ON)=55mΩ@VGS=-4.5V. RDS(ON)=62mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■TSOP-6package. ■Leadfreeproductisacquired.

CEH2321A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-4.8A,RDS(ON)=55mΩ@VGS=-4.5V. RDS(ON)=75mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■TSOP-6package. ■Lead-freeplating;RoHScompliant.

CEH2321A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-4.8A,RDS(ON)=55mW@VGS=-4.5V. RDS(ON)=75mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CEN2321A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-3.7A,RDS(ON)=60mW@VGS=-4.5V. RDS(ON)=80mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

CEN2321B

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-3.9A,RDS(ON)=52mW@VGS=-4.5V. RDS(ON)=72mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

CES2321

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-3.8A,RDS(ON)=55mW@VGS=-4.5V. RDS(ON)=62mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Leadfreeproductisacquired.

CES2321

P-Channel20-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters

CES2321

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-3.8A,RDS(ON)=55mΩ@VGS=-4.5V. RDS(ON)=80mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CES2321A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-3.8A,RDS(ON)=55mΩ@VGS=-4.5V. RDS(ON)=75mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Lead-freeplating;RoHScompliant. ■SOT-23package.

CES2321A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-3.8A,RDS(ON)=55mW@VGS=-4.5V. RDS(ON)=75mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CES2321B

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-3.9A,RDS(ON)=52mW@VGS=-4.5V. RDS(ON)=72mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CHM2321PT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT3.8Ampere FEATURE *Smallflatpackage.(SC-59) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.