IGBT单管

SLKOR

萨科微

Trench Gate IGBT

Features: • 650V trench gate/field termination process • Very low Vce(sat) • Low switching loss • Positive temperature coefficient in Vce(sat) • Lead Free Applications: • EV Charging • Uninterruptible Power Supply (UPS) • Inverters • Load Switch

文件：907.65 Kbytes 页数：9 Pages

HUIXIN

慧芯电子

High Speed IGBT3 Chip

Features: • 650V Trench & Field Stop technology • high speed switching series third generation • low VCE(sat) • low EMI • low turn-off losses • positive temperature coefficient • qualified according to JEDEC for target applications Recommended for: • discrete components and modules Appli

文件：70.55 Kbytes 页数：4 Pages

INFINEON

英飞凌

650V Field Stop IGBT

General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness. This device is for motor control. Features ■ High ruggedness for motor control ■ VCE(sat) positive temperature coeffi

文件：649.99 Kbytes 页数：8 Pages

MGCHIP