Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

· 75 lower Eoff compared to previous generation combined with low conduction losses · Short circuit withstand time – 10 ms · Designed for: - Motor controls - Inverter · NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable be

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HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

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Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ● 75 lower Eoff compared to previous generation combined with low conduction losses ● Short circuit withstand time – 10 μs ● Designed for:    - Motor controls    - Inverter ● NPT-Technology for 600V a

文件：438.56 Kbytes 页数：14 Pages

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Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：368.81 Kbytes 页数：14 Pages

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