Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

· 75 lower Eoff compared to previous generation combined with low conduction losses · Short circuit withstand time – 10 ms · Designed for: - Motor controls - Inverter · NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable be

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Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ● 75 lower Eoff compared to previous generation combined with low conduction losses ● Short circuit withstand time – 10 μs ● Designed for:    - Motor controls    - Inverter ● NPT-Technology for 600V a

文件：438.56 Kbytes 页数：14 Pages

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Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：368.81 Kbytes 页数：14 Pages

INFINEON

英飞凌

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：368.81 Kbytes 页数：14 Pages

INFINEON

英飞凌

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode● 75% lower Eoff compared to previous generation combined with low conduction losses\n● Short circuit withstand time – 10 μs\n● Designed for:\n   - Motor controls\n   - Inverter\n● NPT-Technology for 600V

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Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 20A 92W TO220-3

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