SKP10N60A中文资料Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode数据手册Infineon规格书

描述 Description

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode● 75% lower Eoff compared to previous generation combined with low conduction losses
● Short circuit withstand time – 10 μs
● Designed for:
   - Motor controls
   - Inverter
● NPT-Technology for 600V applications offers:
   - very tight parameter distribution
   - high ruggedness, temperature stable behaviour
   - parallel switching capability
● Very soft, fast recovery anti-parallel Emitter Controlled Diode
● Pb-free lead plating; RoHS compliant
● Qualified according to JEDEC1 for target applications
● Complete product spectrum and PSpice Models : //www.infineon.com/igbt/

应用 Application

● Complete product spectrum and PSpice Models : //www.infineon.com/igbt/

简介

SKP10N60A属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的SKP10N60A晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。