| 订购数量 | 价格 |
|---|---|
| 1+ |
首页>SIZ902DT-T1-GE3>芯片详情
SIZ902DT-T1-GE3_VISHAY/威世_MOSFET 30V 16/16A 29/66W 12/6.4mOhms @ 10V华康联电子
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SIZ902DT-T1-GE3
- 功能描述:
MOSFET 30V 16/16A 29/66W 12/6.4mOhms @ 10V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
相近型号
- SIZ904DTT1GE3
- SIZ900DT
- SIZ904DT-T1-GE3
- SIZ900DP-T1-GE3
- SIZ910DTT1GE3
- SIZ900DP1-GE3
- SIZ910DT-T1-GE3
- SIZ914DT
- SIZ790DT-T1-GE3
- SIZ914DT-GE3
- SIZ790DTT1GE3
- SIZ914DTT1GE3
- SIZ790DT
- SIZ914DT-T1-GE3
- SIZ730DT-TI-GE316
- SIZ916DT
- SIZ916DTT1GE3
- SIZ730DT-T1-GE3
- SIZ916DT-T1-GE3
- SIZ730DTT1GE3
- SIZ916DT-T1-GE3IC
- SIZ728DT-T1-GE3
- SIZ918DT
- SIZ728DTT1GE3
- SIZ918DTT1GE3
- SIZ728DT
- SIZ918DT-T1-GE3
- SIZ720DT-T1-GE3
- SIZ918DT-T1-GE3IC
- SIZ720DTT1GE3
- SIZ712DT-T1-E3
- SIZ920DP-T1-GE3
- SIZ920DT
- SIZ920DTT1GE3
- SIZ710DT-T1-GE3MOS()
- SIZ920DT-T1-GE3
- SIZ710DT-T1-GE3
- SIZ920DT-T1-GE3IC
- SIZ710DTT1GE3
- SIZ710DT-T1-GE
- SIZ926DTT1GE3
- SIZ710DT-T1-E3
- SIZ926DT-T1-GE3
- SIZ710DT-T1
- SIZ980BDT-T1-GE3
- SIZ710DT1-GE3
- SIZ980BDT-T1-GE3-L
- SIZ710DT
- SIZ980DT-T1
- SIZ980DT-T1-GE3



