订购数量 | 价格 |
---|---|
1+ |
首页>SiS472DN-T1-GE3>芯片详情
SiS472DN-T1-GE3_VISHAY/威世科技_MOSFET 30 Volts 20 Amps 28 Watts中天科工二部
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SiS472DN-T1-GE3
- 功能描述:
MOSFET 30 Volts 20 Amps 28 Watts
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
相近型号
- SIS4604DN-T1-GE3
- SIS612EDNT-T1-GE3
- SIS454DN-T1-GE3
- SIS65010F00A0
- SIS448DN-T1-GE3
- SIS698DN-T1-GE3
- SIS447DN-T1-GE3
- SIS780DN-T1-GE3
- SIS447DN
- SIS862DN-T1-GE3
- SIS444DN-T1-GE3
- SIS888DN
- SIS443DN-T1-GE3
- SIS888DN-T1-GE3
- SIS443DN
- SIS890ADN
- SIS438DN-T1-GE3
- SIS890ADN-T1-GE3
- SIS438DN
- SIS890DN-T1-GE3
- SIS436DN-T1-GE3
- SIS892ADN-T1-GE3
- SIS435DNT-T1-GE3
- SIS9634LDN
- SIS435DNT
- SIS990DN
- SIS434DN-T1-GE3
- SIS990DN-T1-GE3
- SIS434DN
- SISA10DN-T1-GE3
- SIS430DN-T1-GE3
- SISA12ADN-T1-GE3
- SIS429DNT-T1-GE3
- SISA14BDN-T1-GE3
- SIS429DNT
- SISA14DN
- SIS427EDN-T1-GE3
- SISA14DN-T1-E3
- SIS426DN-T1-GE3
- SISA14DN-T1-GE3
- SIS424DN-T1-GE3
- SISA18ADN-T1-GE3
- SIS415DNT-T1-GE3
- SISA18DN-T1-GE3
- SIS414DN-T1-GE3
- SISA18JN-T1-GE3-A
- SIS412DN-T1-GE3
- SISA35DN
- SIS412DN
- SISA66DN